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Novel group IV nano- and micro-structures for light sources on silicon

Y. Y. Li ; Y. Han ; Y. X. Song ; Z. P. Zhang ; Z. S. Zhu ; Q. M. Chen ; J. J. Liu ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017 p. 43-44. (2017)
[Konferensbidrag, refereegranskat]

We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical point, and partially suspended GeSn microstructures were fabricated for relaxing the compressive strain.

Denna post skapades 2017-10-02.
CPL Pubid: 252198


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Institutionen för mikroteknologi och nanovetenskap, Fotonik



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