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A Non-galvanic D-band MMIC-to-Waveguide Transition Using eWLB Packaging Technology

Ahmed Hassona (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Zhongxia Simon He (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Chiara Mariotti ; Franz Dielacher ; Vessen Vassilev (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Yinggang Li ; Joachim Oberhammer ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2017 IEEE MTT-S International Microwave Symposium, IMS 2017, Honololu, United States, 4-9 June 2017 (0149-645X). p. 510-512. (2017)
[Konferensbidrag, refereegranskat]

This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110-138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors’ knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.

Nyckelord: D-band, interconnects, waveguide transition, eWLB, millimeter waves, THz

Denna post skapades 2017-08-25. Senast ändrad 2017-12-21.
CPL Pubid: 251430


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