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Design and Analysis of a Wideband Gilbert Cell VGA in 0.25 um InP DHBT Technology With DC-40-GHz Frequency Response

Marcus Gavell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Sten E. Gunnarsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Zhongxia Simon He (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Ferndahl (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 99 (2017), 1, p. 1-13.
[Artikel, refereegranskad vetenskaplig]

A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- μ m InP double heterojunction bipolar transistor technology with fT/f max of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single -7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 mm^2. We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias



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Denna post skapades 2017-08-21.
CPL Pubid: 251313