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Electrical gate control of spin current in van der Waals heterostructures at room temperature

André Dankert (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Saroj Prasad Dash (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Nature Communications (2041-1723). Vol. 8 (2017), p. Article no 16093 .
[Artikel, refereegranskad vetenskaplig]

Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS2). Here we combine graphene and MoS2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By performing non-local spin valve and Hanle measurements, we unambiguously prove the gate tunability of the spin current and spin lifetime in graphene/MoS2 vdWhs at 300 K. This unprecedented control over the spin parameters by orders of magnitude stems from the gate tuning of the Schottky barrier at the MoS2/graphene interface and MoS2 channel conductivity leading to spin dephasing in high-SOC material. Our findings demonstrate an all-electrical spintronic device at room temperature with the creation, transport and control of the spin in 2D materials heterostructures, which can be key building blocks in future device architectures.

Nyckelord: Hexagonal Boron-Nitride, Effect Transistor, Graphene, Injection, Field, Spintronics, Precession, Transport, Charge, Polarization



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Denna post skapades 2017-08-14. Senast ändrad 2017-10-03.
CPL Pubid: 251098

 

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Projekt

Denna publikation är ett resultat av följande projekt:


Graphene-Based Revolutions in ICT And Beyond (GRAPHENE) (EC/FP7/604391)