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1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

X. Y. Wu ; W. W. Pan ; Z. P. Zhang ; Y. Y. Li ; C. F. Cao ; J. J. Liu ; L. Y. Zhang ; Y. X. Song ; H. Y. Ou ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Acs Photonics (2330-4022). Vol. 4 (2017), 6, p. 1322-1326.
[Artikel, refereegranskad vetenskaplig]

As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

Nyckelord: GaAsBi, molecular beam epitaxy, laser diodes, quantum well, uncooled laser,Temperature-Dependence, Semiconductor-Lasers, Band-Gap, Gaas1-Xbix, Recombination, Wavelength, Gainnas, Diodes

Denna post skapades 2017-08-10.
CPL Pubid: 251024


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Institutionen för mikroteknologi och nanovetenskap, Fotonik



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