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Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

André Dankert (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Saroj Prasad Dash (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
ACS Nano (1936-0851). Vol. 11 (2017), 6, p. 6389–6395.
[Artikel, refereegranskad vetenskaplig]

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Nyckelord: spin-polarized tunneling, multilayer MoS2, 2D semiconductor, tunnel magnetoresistance, density functional theory



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Denna post skapades 2017-07-17. Senast ändrad 2017-08-14.
CPL Pubid: 250730

 

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