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Dielectric properties of Mn doped Bismuth Barium Titanate based ceramic thin films prepared by PLD technique

Shoaib Alam Mallick (Institutionen för mikroteknologi och nanovetenskap) ; Andrei Vorobiev (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Z. Ahmad ; F. Touati ; Spartak Gevorgian (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Ceramics International (0272-8842). Vol. 43 (2017), 12, p. 8778-8783.
[Artikel, refereegranskad vetenskaplig]

In this article, the effect of Mn doping on the permittivity and dielectric loss in 0.67BiFeO(3)-0.33BaTiO(3) (BF-BT) based film bulk acoustic resonator test structures has been investigated. BF-BT thin films were deposited on the fused silica substrates with Pt/TiO2/Ti as bottom electrode. During the study of the BF-BT based parallel-plate structures, it has been revealed that BF-BT is in the ferroelectric state at room temperature. Higher permittivity (epsilon) is observed at a growth temperature of 600 degrees C and lower dielectric loss is achieved at 0.3 wt% Mn doping contents. These results show that the proposed BF-BT based FBAR test structure has a great potential for applications in tunable thin Film Bulk Acoustic Resonator (FBAR) devices. Comparison of the measured and simulation results has been made by utilizing the Mason equivalent circuit.

Nyckelord: Bismuth Barium Titanate; Mn doped BF-BT thin films; Dielectric properties; Tunable FBAR; PLD technique



Denna post skapades 2017-07-14.
CPL Pubid: 250697

 

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