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Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor

A. S. Trifonov ; D. E. Presnov ; I. V. Bozhev ; D. A. Evplov ; Vincent Desmaris (Institutionen för rymd- och geovetenskap, Avancerad mottagarutveckling) ; V. A. Krupenin
Ultramicroscopy (03043991). Vol. 179 (2017), Augusti, p. 33-40.
[Artikel, refereegranskad vetenskaplig]

We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10? 3 e/Hz?1/2 at room temperature.

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Denna post skapades 2017-06-14. Senast ändrad 2017-07-26.
CPL Pubid: 249799


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Institutionen för rymd- och geovetenskap, Avancerad mottagarutveckling (2010-2017)


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