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Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy

Y. Li ; Y. X. Song ; Z. P. Zhang ; Y. Y. Li ; Q. M. Chen ; F. X. Zha ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Materials Research Express (2053-1591). Vol. 4 (2017), 4, p. Article nr 045907 .
[Artikel, refereegranskad vetenskaplig]

Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that of the GaSb, inferring as large as 7.74% tensile strain in the Ge nanostructures.

Nyckelord: scanning tunneling microscopy, tensile-strained Ge, nanostructure



Denna post skapades 2017-06-13. Senast ändrad 2017-06-14.
CPL Pubid: 249745

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Nanoteknik

Chalmers infrastruktur