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Hybrid vertical-cavity laser integration on silicon

Emanuel P. Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; S. Kumari ; Johan S. Gustavsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Erik Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; G. Roelkens ; R. G. Baets ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Proceedings of SPIE - The International Society for Optical Engineering, Vertical-Cavity Surface-Emitting Lasers XXI; San Francisco; United States; 1-2 February 2017 (0277786X). Vol. 10122 (2017), p. 101220H.
[Konferensbidrag, refereegranskat]

The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.

Nyckelord: Heterogeneous integration, Hybrid vertical-cavity, Photonic integration, Silicon photonics, Vertical-cavity surface-emitting laser

Denna post skapades 2017-05-12. Senast ändrad 2017-09-04.
CPL Pubid: 249296


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