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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

L. J. Wang ; L. Y. Zhang ; L. Yue ; D. Liang ; X. R. Chen ; Y. Y. Li ; P. F. Lu ; J. Shao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Crystals (2073-4352). Vol. 7 (2017), 3, p. Article no 63 .
[Artikel, refereegranskad vetenskaplig]

Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

Nyckelord: dilute bismide, III-N-Bi, III-P-Bi, III-As-Bi, III-Sb-Bi, MBE, MOCVD, surfactant, droplet

Denna post skapades 2017-05-09. Senast ändrad 2017-07-04.
CPL Pubid: 249197


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Institutionen för mikroteknologi och nanovetenskap, Fotonik



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