CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Tunable band gaps in stanene/MoS2 heterostructures

D. Liang ; H. He ; P. F. Lu ; L. Y. Wu ; C. F. Zhang ; P. F. Guan ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Journal of Materials Science (0022-2461). Vol. 52 (2017), 10, p. 5799-5806.
[Artikel, refereegranskad vetenskaplig]

First-principles calculations have been performed to investigate the geometric and electronic properties of stanene layer paired with monolayer MoS2 substrate with van der Waals corrections. It is found that the stanene can absorb on the monolayer MoS2 substrate forming stanene/MoS2 heterostructures, indicating a weak interface interaction. The Dirac point of stanene is still preserved on MoS2 substrate, and the band gap is opened about 67 meV due to the influence of the substrate. Moreover, the band gap is able to be effectively modulated under an external strain and a perpendicular electric field. These results are helpful for exploring the tunability of the electronic properties of stanene absorbed on semiconducting substrate.

Nyckelord: External Electric-Field, Hetero-Bilayers, Silicene, Monolayer, Mos2, Semiconductors

Denna post skapades 2017-05-04.
CPL Pubid: 249109


Läs direkt!

Länk till annan sajt (kan kräva inloggning)

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik


Den kondenserade materiens fysik

Chalmers infrastruktur