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Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Omid Habibpour (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Zhongxia Simon He (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Wlodek Strupinski ; Niklas Rorsman ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Scientific Reports (2045-2322). Vol. 7 (2017), p. 41828.
[Artikel, refereegranskad vetenskaplig]

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.



Denna post skapades 2017-03-08. Senast ändrad 2017-05-19.
CPL Pubid: 248478

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur