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Chemical vapor deposition grown graphene on Cu-Pt alloys

Yong Zhang (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Yifeng Fu (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Michael Edwards (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Kjell Jeppson (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Lilei Ye ; Johan Liu (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system )
Materials letters (0167-577X). Vol. 193 (2017), p. 255-258.
[Artikel, refereegranskad vetenskaplig]

In this letter, the results from a series of experiments where graphene was grown on copper-platinum (Cu-Pt) alloy foils by chemical vapor deposition (CVD) are presented. By using Raman spectroscopy to analyze graphene films grown on Pt-Cu alloy foils with different Cu/Pt weight ratios (75/25, 50/50 and 25/75), we could show how the Cu/Pt weight ratio affected both the quality and the number of layers in the as-synthesized graphene films. Furthermore, graphene growth was shown to occur at temperatures as low as 750 °C due to what we believe is the strong catalytic ability of the Cu-Pt alloy foils. By keeping the flow rate of the CH4 precursor gas as low as 1.5 sccm, a low growth rate was obtained where the growth rates of monolayer and bilayer graphene could be controlled by simply adjusting the growth time.

Nyckelord: Alloy; Chemical vapor deposition; Cu-Pt; Graphene



Denna post skapades 2017-03-03.
CPL Pubid: 248397

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system

Ämnesområden

Kemiteknik

Chalmers infrastruktur