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**Harvard**

Bezuglyi, E., Bratus, E. och Shumeiko, V. (2017) *Resonant subgap current transport in Josephson field effect transistor*.

** BibTeX **

@article{

Bezuglyi2017,

author={Bezuglyi, E. V. and Bratus, E. N. and Shumeiko, Vitaly},

title={Resonant subgap current transport in Josephson field effect transistor},

journal={Physical Review B. Condensed Matter and Materials Physics},

issn={1098-0121},

volume={95},

issue={1},

pages={Article no 014522 },

abstract={We study theoretically the current-voltage characteristics (IVCs) of the Josephson field effect transistor - a ballistic SNINS junction with superconducting (S) electrodes confining a planar normal-metal region (N), which is controlled by the gate-induced potential barrier (I). Using the computation technique developed earlier for long single-channel junctions in the coherent multiple Andreev reflection (MAR) regime, we find a significant difference of the subgap current structure compared to the subharmonic gap structure in tunnel junctions and atomic-size point contacts. For long junctions, whose lengths significantly exceed the coherence length, the IVC exhibits current peaks at multiples (harmonics) of the distance ?m between the static Andreev levels eVn=n?m. Moreover, the averaged IVC follows the powerlike behavior rather than the exponential one and has a universal scaling with the junction transparency. This result is qualitatively understood using an analytical approach based on the concept of resonant MAR trajectories. In shorter junctions having lengths comparable to the coherence length, the IVC has an exponential form common for point contacts, however the current structures appear at the subharmonics of the interlevel distance eVn=?m/n rather than the gap subharmonics 2?/n.},

year={2017},

}

** RefWorks **

RT Journal Article

SR Electronic

ID 248381

A1 Bezuglyi, E. V.

A1 Bratus, E. N.

A1 Shumeiko, Vitaly

T1 Resonant subgap current transport in Josephson field effect transistor

YR 2017

JF Physical Review B. Condensed Matter and Materials Physics

SN 1098-0121

VO 95

IS 1

AB We study theoretically the current-voltage characteristics (IVCs) of the Josephson field effect transistor - a ballistic SNINS junction with superconducting (S) electrodes confining a planar normal-metal region (N), which is controlled by the gate-induced potential barrier (I). Using the computation technique developed earlier for long single-channel junctions in the coherent multiple Andreev reflection (MAR) regime, we find a significant difference of the subgap current structure compared to the subharmonic gap structure in tunnel junctions and atomic-size point contacts. For long junctions, whose lengths significantly exceed the coherence length, the IVC exhibits current peaks at multiples (harmonics) of the distance ?m between the static Andreev levels eVn=n?m. Moreover, the averaged IVC follows the powerlike behavior rather than the exponential one and has a universal scaling with the junction transparency. This result is qualitatively understood using an analytical approach based on the concept of resonant MAR trajectories. In shorter junctions having lengths comparable to the coherence length, the IVC has an exponential form common for point contacts, however the current structures appear at the subharmonics of the interlevel distance eVn=?m/n rather than the gap subharmonics 2?/n.

LA eng

DO 10.1103/PhysRevB.95.014522

LK http://dx.doi.org/10.1103/PhysRevB.95.014522

LK http://publications.lib.chalmers.se/records/fulltext/248381/local_248381.pdf

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