CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Negative thermal quenching of below-bandgap photoluminescence in InPBi

Xiren Chen ; Xiaoyan Wu ; Li Yue ; Liangqing Zhu ; Wenwu Pan ; Zhen Qi ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Jun Shao
Applied Physics Letters (00036951). Vol. 110 (2017), 5,
[Artikel, refereegranskad vetenskaplig]

This paper reports a temperature-dependent (10-280 K) photoluminescence (PL) study of below-bandgap electron-hole recombinations and anomalous negative thermal quenching of PL intensity in InP1- xBix (x = 0.019 and 0.023). Four PL features are well resolved by curve-fitting of the PL spectra, of which the energies exhibit different temperature dependence. The integral intensities of the two high-energy features diminish monotonically as temperature rises up, while those of the two low-energy features decrease below but increase anomalously above 180 K. A phenomenological model is established that the residual electrons in the final state of the PL transition transfer into nonradiative state via thermal hopping, and the thermal hopping produces in parallel holes in the final state and hence enhances the radiative recombination significantly. A reasonable interpretation of the PL processes in InPBi is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. © 2017 Author(s).

Denna post skapades 2017-03-03. Senast ändrad 2017-07-07.
CPL Pubid: 248380


Läs direkt!

Lokal fulltext (fritt tillgänglig)

Länk till annan sajt (kan kräva inloggning)