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MgB2 thin film terahertz mixers

Sergey Cherednichenko (Institutionen för mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi) ; Vladimir Drakinskiy (Institutionen för mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi) ; Kenji Ueda ; Michio Naito
in Proc.17th Intern. Symp. Space THz Technology, Paris, France, May. 2006 (2006)
[Konferensbidrag, övrigt]

Thin film (20 nm) MgB2 bolometric devices were made on silicon substrates. The performance of the devices as THz mixers was investigated with respect to the gain bandwidth and the noise temperature. For the given film thickness the 3 dB gain roll-off frequency is 2.5 GHz, which is much higher than for the NbN HEB mixers of the same thickness. Corrected DSB mixer noise temperature is 2000 K at 2 GHz IF. The noise bandwidth was measured in the IF range of 2-5 GHz.

Nyckelord: MgB2, superconducting film, mixer, terahertz, electron-phonon interaction



Denna post skapades 2007-03-08. Senast ändrad 2007-11-16.
CPL Pubid: 24810

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi (2006-2007)

Ämnesområden

Supraledning

Chalmers infrastruktur