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Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

Wenwu Pan ; Liyao Zhang ; Liang Zhu ; yuxin song ; Yaoyao Li ; Chang Wang ; Peng Wang ; Xiaoyan Wu ; Fan Zhang ; Jun Shao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Semiconductor Science and Technology (0268-1242). Vol. 32 (2017), 1,
[Artikel, refereegranskad vetenskaplig]

InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k • p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm

Nyckelord: GaAsBi, kp method, molecular beam epitaxy, photoluminescence, type-II quantum well

Denna post skapades 2017-01-30. Senast ändrad 2017-02-15.
CPL Pubid: 247892


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Institutionen för mikroteknologi och nanovetenskap, Fotonik



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