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A direct extraction algorithm for a submicron MOS transistor model

Peter R. Karlsson (Institutionen för fasta tillståndets elektronik) ; Kjell Jeppson (Institutionen för fasta tillståndets elektronik ; Institutionen för mikroelektronik och nanovetenskap)
Proceedings of the International Conference on Microelectronic Test Structures ICMTS Vol. 1993 (1993), 22-25 March 1993,
[Konferensbidrag, refereegranskat]

A four-point technique for direct extraction of the linear region model parameters of submicron transistors is presented. The choice of data points for minimizing sensitivity to measurement noise is discussed. For a submicron transistor model where a second order mobility reduction factor is included to model the quadratic gate voltage dependence, direct extraction of the four linear-region parameters is possible using only four data points. This means that efficient parameter extraction is facilitated and that this type of submicron transistor model can be used in production control.

Nyckelord: MOSFETs, Data mining, Threshold voltage, Noise measurement, Solid modeling, Transistors, Sensitivity analysis, Solid state circuits, Circuit noise, Geometry

Denna post skapades 2017-01-29.
CPL Pubid: 247817


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Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)
Institutionen för mikroelektronik och nanovetenskap (1900-2003)


Elektroteknik och elektronik

Chalmers infrastruktur