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An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE M)53 and BSIM models

Peter R. Karlsson (Institutionen för fasta tillståndets elektronik) ; Kjell Jeppson (Institutionen för fasta tillståndets elektronik ; Institutionen för mikroelektronik och nanovetenskap)
Proceedings of the International Conference on Microelectronic Test Structures ICMTS Vol. 1992 (1992), 16-19 March 1992,
[Konferensbidrag, refereegranskat]

A general strategy for direct extraction of MOS transistor DC parameters using only a small number of data points has been developed. This extraction algorithm has been implemented for two semi-empirical SPICE MOS transistor models, MOS3 and BSIM. Fifteen data points were used to determine the ten MOS3 transistor parameters while 25 data points were used to determine the 20 BSIM parameters. It was possible to obtain good agreement between measured and simulated characteristics. It was also shown that series resistance independent parameters can be extracted with a direct parameter extraction algorithm.

Nyckelord: MOSFETs, SPICE, Data mining, Equations, Geometry, Threshold voltage, Solid state circuits, Parameter extraction, Production control, Noise measurement



Denna post skapades 2017-01-29.
CPL Pubid: 247815

 

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Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)
Institutionen för mikroelektronik och nanovetenskap (1900-2003)

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur