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A direct method to extract effective geometries and series resistances of MOS transistors

Peter R. Karlsson (Institutionen för fasta tillståndets elektronik) ; Kjell Jeppson (Institutionen för fasta tillståndets elektronik ; Institutionen för mikroelektronik och nanovetenskap)
Proceedings of the International Conference on Microelectronic Test Structures ICMTS Vol. 1994 (1994), 22-25 March 1994,
[Konferensbidrag, refereegranskat]

A new direct method for rapid characterization of MOS transistor effective geometries and series resistances is presented. The method only requires devices of four different sizes. Also presented is a new linear regression technique that offers a natural extension of the method to any arbitrary number of devices. Finally, the channel width dependence of the mobility reduction factor is shown to be explained by the electrical broadening of the channel.

Nyckelord: Geometry, MOSFETs, Electric resistance, Threshold voltage, Optimization methods, Solid state circuits, Linear regression, Condition monitoring, Circuit synthesis, SPICE



Denna post skapades 2017-01-29.
CPL Pubid: 247814

 

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Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)
Institutionen för mikroelektronik och nanovetenskap (1900-2003)

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur