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Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission

Li Yue ; yuxin song ; Xiren Chen ; Qimiao Chen ; Wenwu Pan ; Xiaoyan Wu ; Juanjuan Liu ; Liyao Zhang ; Jun Shao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Journal of Alloys and Compounds (0925-8388). Vol. 695 (2017), p. 753-759.
[Artikel, refereegranskad vetenskaplig]

We propose a new type II InGaAs/GaAsBi quantum well structure to extend light emission wavelength on GaAs and demonstrate the effect experimentally. Type II InGaAs/GaAsBi QWs were grown using molecular beam epitaxy. Room temperature photoluminescence confirms wavelength extension to 1230 nm, 82 and 208 nm longer than that of the type I GaAsBi and InGaAs QW with the same Bi or In content, respectively. The PL intensity is enhanced by more than ten times than the GaAsBi QW. Our results show that the type II dilute bismide QW has potentials for making telecom lasers on GaAs.

Nyckelord: Dilute bismides; InGaAs/GaAsBi type II QW; Optical properties; Structural properties; Wavelength extension

Denna post skapades 2017-01-27. Senast ändrad 2017-02-15.
CPL Pubid: 247790


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik



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