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A V-Band Stacked HEMT Power Amplifier With 25-dBm Saturated Output Power in 0.1-mu m InGaAs Technology

Marcus Gavell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Ferndahl ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 64 (2016), 12, p. 4232-4240.
[Artikel, refereegranskad vetenskaplig]

A stacked high-electron mobility transistor (HEMT) power amplifier (PA) has been designed and implemented in a commercial 0.1-mu m InGaAs pHEMT process to increase gain and output power at millimeter-wave frequencies. The stability problem of the stacked HEMT has been analyzed. A new layout of the stacked HEMT for improving the high frequency stability is proposed and used in the PA design. Measurements on the three-stage PA with parallel devices verify the saturated output power of 25 dBm and the maximum power added efficiency of 15% at 61 GHz, which is the highest reported output power of stacked HEMT PAs. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).

Nyckelord: FET, GaAs, high-electron mobility transistor (HEMT), MMIC, millimeter wave (mm-wave), power amplifier (PA), stability analysis, stacked, V-band

Denna post skapades 2017-01-23. Senast ändrad 2017-03-21.
CPL Pubid: 247601


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur