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A procedure for the extraction of a nonlinear microwave GaN FET model

G. Avolio ; V. Vadala ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; A. Raffo ; M. Marchetti ; G. Vannini ; D. Schreurs
International Journal of Numerical Modelling-Electronic Networks Devices and Fields (0894-3370). Vol. 30 (2017), 1, p. UNSP e2151.
[Artikel, refereegranskad vetenskaplig]

In this paper, we describe an extraction procedure of nonlinear models for microwave field-effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we extract the parameters by combining direct extraction and numerical optimization. We determine a first estimate of the model parameters by few DC and S-parameter measurements. Next, we refine the parameters by optimization against low-frequency and high-frequency vector-calibrated large-signal measurements gathered with a Large-Signal-Network Analyzer (LSNA). As case study we consider a 0.25x200 mu m(2) GaN FET on SiC for power amplifier applications. Ultimately, we want to show that a good accuracy level can be achieved while minimizing the extraction effort and that an accurate model can be built and suitably tailored depending on the final application.

Nyckelord: FET nonlinear model, large-signal network analyzer, nonlinear model extraction, vector-calibrated measurements



Denna post skapades 2017-01-20.
CPL Pubid: 247521

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur