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Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Marlene Bonmann (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Andrei Vorobiev (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
Journal of Vacuum Science & Technology B (1071-1023). Vol. 35 (2017), 1, p. 01A115.
[Artikel, refereegranskad vetenskaplig]

A semiempirical model describing the influence of interface states on characteristics of gate capacitance and drain resistance versus gate voltage of top gated graphene field effect transistors is presented. By fitting our model to measurements of capacitance–voltage characteristics and relating the applied gate voltage to the Fermi level position, the interface state density is found. Knowing the interface state density allows us to fit our model to measured drain resistance–gate voltage characteristics. The extracted values of mobility and residual charge carrier concentration are compared with corresponding results from a commonly accepted model which neglects the effect of interface states. The authors show that mobility and residual charge carrier concentration differ significantly, if interface states are neglected. Furthermore, our approach allows us to investigate in detail how uncertainties in material parameters like the Fermi velocity and contact resistance influence the extracted values of interface state density, mobility, and residual charge carrier concentration.

Nyckelord: capacitance, drain resistance, interface states, graphene



Denna post skapades 2017-01-17. Senast ändrad 2017-03-21.
CPL Pubid: 247214

 

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