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Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Emanuel P. Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Sulakshna Kumari ; Erik Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Johan S. Gustavsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Roel G. Baets ; Gunther Roelkens ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
IEEE Journal of Selected Topics in Quantum Electronics (1077-260X). Vol. 23 (2017), 6, p. 1700109.
[Artikel, refereegranskad vetenskaplig]

The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity vertical-cavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III–V “half-VCSEL” to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO2 layer on the “half-VCSEL,” can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85 °C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.

Nyckelord: Heterogeneous integration, high-speed modulation, large signal modulation, optical interconnects, semiconductor lasers, silicon photonics, vertical-cavity surface-emitting laser (VCSEL)



Denna post skapades 2017-01-17. Senast ändrad 2017-03-31.
CPL Pubid: 247160

 

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