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Driver Topologies for RF Doherty Power Amplifiers

Paul Saad ; Zahra Asghari (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Hossein Mashad Nemati
IEEE Microwave and Wireless Components Letters (1531-1309). Vol. 27 (2017), 1, p. 67-69.
[Artikel, refereegranskad vetenskaplig]

In this letter, class-B, embedded class-B, and Doherty driver topologies are investigated for RF Doherty Power Amplifiers (PAs). The investigation is firstly conducted theoretically and by simulations and then verified by design and implementation of the different topologies at 2.1 GHz using GaN-HEMT transistors. The results show that the highest lineup efficiency can be achieved when using a Doherty driver. Modulated measurements using the same LTE signal and the same digital per-distorter (DPD), show about 2% and 4% higher average lineup efficiency when the Doherty driver is used compared to the class-B and embedded class-B drivers, respectively.

Nyckelord: Doherty power amplifier; driver amplifier; GaN-HEMT; two-stage power amplifier

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Denna post skapades 2016-12-29. Senast ändrad 2017-07-03.
CPL Pubid: 246526


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