CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

A brief overview of atomic layer deposition and etching in the semiconductor processing

Guangjie Yuan ; Ning Wang ; Shirong Huang ; Johan Liu (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system )
2016 17th International Conference on Electronic Packaging Technology, ICEPT 2016 p. 1365-1368. (2016)
[Konferensbidrag, refereegranskat]

Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-Thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.

Nyckelord: atomic layer deposition, atomic layer etching, self-limiting behavior, semiconductor processing



Denna post skapades 2016-12-19. Senast ändrad 2017-01-17.
CPL Pubid: 246273

 

Läs direkt!


Länk till annan sajt (kan kräva inloggning)