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Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Tongde Huang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; C. Liu ; Johan Bergsten (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; H. Jiang ; K. M. Lau ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2016 Compound Semiconductor Week, CSW 2016; Toyama, Japan p. Article no. 7528722. (2016)
[Konferensbidrag, refereegranskat]

This work reports the fabrication of AlGaN/GaN HEMTs with regrown ohmic contacts using either a passivation-last or a passivation-first process, where the order of surface passivation and gate metallization processes is different. An improved performance is demonstrated using the passivation-first process, achieving a maximum current/power gain cutoff frequency (fT/fmax) around 60/127 GHz with an 80-nm gate length. The ohmic contacts were regrown with highly doped n-GaN, resulting in a contact resistance of ~0.2 Ω·mm. The RF performance can be further enhanced by reducing the extrinsic gate capacitance and short channel effects.



Denna post skapades 2016-11-14.
CPL Pubid: 245121

 

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