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Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Tongde Huang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Olle Axelsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Thi Do Thanh Ngoc (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Dan Kuylenstierna (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Ieee Transactions on Electron Devices (0018-9383). Vol. 63 (2016), 10, p. 3887-3892.
[Artikel, refereegranskad vetenskaplig]

High-frequency and low-frequency noise (LFN) performance of GaN high electron-mobility transistors (HEMTs), passivated with SiNx deposited by either in situ or low-pressure-chemical-vapor-deposition (LPCVD), are compared. From 8-26 GHz, the LPCVD sample has a lower minimum noise figure (1 dB at 8 GHz) because of lower power spectral density of noise sources and less transconductance (g(m)) dispersion. The LPCVD and the in situ SiNx passivated HEMTs exhibit similar LFN in the 1 Hz-100 kHz range (drain current noise spectra similar to 10(-17) A(2)/Hz at 100 kHz). Nevertheless, LPCVD should be a preferred choice for voltage-controlled oscillator (VCO) applications, since it is capable of suppressing current collapse more effectively, which results in a higher output power and, therefore, a lower phase noise. Furthermore, the low current collapse, low LFN, and minimum noise figure makes the LPCVD SiNx passivation a promising candidate for multifunctional monolithic microwave integrated circuits, including power amplifiers, low-noise amplifier, switches, mixers, and VCOs.

Nyckelord: AlGaN/GaN high-electron-mobility transistors (HEMTs), low-frequency noise (LFN), noise figure, oscillator, hfets, Engineering, Physics



Denna post skapades 2016-10-28.
CPL Pubid: 244404

 

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