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Structural and Optical Properties of High Bi Content GaSbBi Films Grown by Molecular Beam Epitaxy

L Yue ; Y Zhang ; F Zhang ; L Wang ; Y Zhuzhong ; J Liu ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
The 43rd International Symposium on Compound Semiconductors (ISCS), the 2016 Compound Semiconductor Week (CSW2016) p. 7528861. (2016)
[Konferensbidrag, refereegranskat]

GaSb1-xBix thin films with 0 <= x <= 13% were grown by molecular beam epitaxy. The Bi content, lattice expansion and crystal structure were investigated by Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. Photoluminescence spectra of the GaSb1-xBix alloys with various Bi contents were studied at 77 K. The bandgap energy of GaSb1-xBix is decreased effectively as Bi content increasing. The PL peak energy of the 13% Bi content GaSb1-xBix is extended to 2.43 mu m, indicating that GaSb1-xBix alloys has potentials in mid-infrared applications.

Nyckelord: GaSbBi, dilute bismide, molecular beam epitaxy, photoluminescence

Denna post skapades 2016-10-19. Senast ändrad 2017-02-17.
CPL Pubid: 243724


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Institutionen för mikroteknologi och nanovetenskap, Fotonik



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