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A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

David Kiefer (Institutionen för kemi och kemiteknik) ; Liyang Yu (Institutionen för kemi och kemiteknik) ; Erik Fransson ; Andres Gomez ; Daniel Priemetzhofer ; Aram Amassian ; Mariano Campoy-Quiles ; Christian Müller (Institutionen för kemi och kemiteknik, Polymerteknologi)
Advanced Science p. 1600203. (2016)
[Artikel, refereegranskad vetenskaplig]

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

Nyckelord: organic thermoelectrics, ternary blend, polymer semiconductor, doping



Denna post skapades 2016-10-07.
CPL Pubid: 243085

 

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