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4 W Highly Linear and Reliable GaN Power Amplifier for C-Band Applications

Oliver Silva Barrera (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Asia-Pacific Microwave Conference, APMC 2015; Jinling HotelNanjing; China; 6 December 2015 through 9 December 2015 Vol. 3 (2015), p. Art. no. 7413430.
[Konferensbidrag, refereegranskat]

A C-band GaN amplifier is reported. The design method is focused on high linearity load optimization and use of non-linear transistor models to predict harmonic generation and intermodulation products. The amplifier is characterized in terms of S-parameters, single tone and two tone output power. The measured small signal gain is 24.6 dB. The 1 dB compression point is measured at 36 dBm and the output third order intercept point (OIP3) is above 45 dBm. The power consumption is 10.7 W, the channel temperature 205 degrees C at drain bias 15 V avoiding stress on the device for reliable operation.



Denna post skapades 2016-10-07. Senast ändrad 2016-12-19.
CPL Pubid: 243072

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Telekommunikation

Chalmers infrastruktur