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Octave Band Linear MMIC Amplifier With+40-dBm OIP3 for High-Reliability Space Applications

Oliver Silva Barrera (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Ieee Transactions on Microwave Theory and Techniques (0018-9480). Vol. 64 (2016), 7, p. 2059-2067.
[Artikel, refereegranskad vetenskaplig]

A systematic design procedure for highly linear and reliable amplifiers is proposed. The procedure deals with non-linear modeling, junction temperature prediction methods, and circuit design techniques. A wideband linear monolithic microwave integrated circuit power amplifier based on a space-qualified GaAs process for C-band and extended C-band multicarrier satellite transponder is reported and described. The amplifier uses a bus-bar combiner in the power stage reaching an output power of 26.7 dBm at 1-dB compression point, with a small signal gain above 25 dB in the operation band between 3 and 6 GHz. The output third-order intercept point reaches levels above 40 dBm. The design ensures high reliability keeping the junction temperature below 112 degrees C.

Nyckelord: Bus-bar combiner; C-band; high linearity; junction temperature; monolithic microwave integrated circuit (MMIC); nonlinear modeling; power amplifier

Denna post skapades 2016-08-26. Senast ändrad 2017-03-21.
CPL Pubid: 240823


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur