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Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

P. Wang ; W. W. Pan ; X. Y. Wu ; J. J. Liu ; C. F. Cao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Q. Gong
Nanoscale Research Letters (1556-276X). Vol. 11 (2016),
[Artikel, refereegranskad vetenskaplig]

InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.

Nyckelord: InAs, Quantum dot, GaAsBi, MBE, Thermal stability



Denna post skapades 2016-08-11. Senast ändrad 2016-08-12.
CPL Pubid: 240166

 

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