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**Harvard**

Fu, Y., Engström, O. och Luo, Y. (2004) *Emission rates for electron tunneling from InAs quantum dots to GaAs substrate*.

** BibTeX **

@article{

Fu2004,

author={Fu, Ying and Engström, Olof and Luo, Y},

title={Emission rates for electron tunneling from InAs quantum dots to GaAs substrate},

journal={Journal of Applied Physics},

issn={0021-8979},

volume={96},

issue={11},

pages={6477-6481},

abstract={Tunneling emission rates of electrons from InAs quantum dots (QD) in a GaAs matrix depletion region have been calculated for application in the analysis of experimental data from deep-level transient spectroscopy (DLTS). The hybridization among metastable states localized in the InAs QD and continuum states in the GaAs substrate in the DLTS measurement is evaluated from the local densities of states. Two physical quantities have been calculated, the broadening of the metastable state localized in the InAs QD, i.e., the charge-transfer rates from the quantum dot to the substrate, and the corresponding hybridization coefficients. The metastable state is broadened significantly only when the bias is large enough, whereas the hybridization coefficients increase almost linearly with the bias. The effects of the direct Coulomb interactions and exchange energies among electrons initially confined in the QD have been included and found to be very significant. Increasing the number of electrons initially confined in the QD from 1 to 4, the charge-transfer rates increase by a factor of 1.8.},

year={2004},

}

** RefWorks **

RT Journal Article

SR Electronic

ID 2395

A1 Fu, Ying

A1 Engström, Olof

A1 Luo, Y

T1 Emission rates for electron tunneling from InAs quantum dots to GaAs substrate

YR 2004

JF Journal of Applied Physics

SN 0021-8979

VO 96

IS 11

SP 6477

OP 6481

AB Tunneling emission rates of electrons from InAs quantum dots (QD) in a GaAs matrix depletion region have been calculated for application in the analysis of experimental data from deep-level transient spectroscopy (DLTS). The hybridization among metastable states localized in the InAs QD and continuum states in the GaAs substrate in the DLTS measurement is evaluated from the local densities of states. Two physical quantities have been calculated, the broadening of the metastable state localized in the InAs QD, i.e., the charge-transfer rates from the quantum dot to the substrate, and the corresponding hybridization coefficients. The metastable state is broadened significantly only when the bias is large enough, whereas the hybridization coefficients increase almost linearly with the bias. The effects of the direct Coulomb interactions and exchange energies among electrons initially confined in the QD have been included and found to be very significant. Increasing the number of electrons initially confined in the QD from 1 to 4, the charge-transfer rates increase by a factor of 1.8.

LA eng

LK http://dx.doi.org/10.1063/1.1813620

OL 30