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Rapid chemical vapor deposition of graphene on liquid copper

W. Guo ; C. Xu ; K. Xu ; J. Deng ; W. L. Guo ; Avgust Yurgens (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Jie Sun (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Synthetic metals (0379-6779). Vol. 216 (2016), p. 93-97.
[Artikel, refereegranskad vetenskaplig]

Molten copper is used to catalyze the graphene synthesis by chemical vapor deposition. The Cu has no grains above melting temperature, which is favorable for graphene growth. Using a vertical cold wall system, the deposition rate is drastically increased as compared with common hot-wall tube furnaces, pushing the method one step forward towards applications. A molybdenum-graphite Joule heater is used to avoid mechanical deformation of the carrier foil for the catalyst to ease the subsequent processes. The rapid deposition makes it possible to observe graphene growth on liquid Cu even at low pressure, where severe Cu evaporation simultaneously occurs.

Nyckelord: Graphene, Chemical vapor deposition, Liquid copper



Denna post skapades 2016-07-06. Senast ändrad 2016-07-06.
CPL Pubid: 239047

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Materialkemi

Chalmers infrastruktur