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Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes

J. Kosmaca ; J. Andzane ; M. Baitimirova ; Floriana Lombardi (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; D. Erts
ACS Applied Materials and Interfaces (1944-8244). Vol. 8 (2016), 19, p. 12257-12262.
[Artikel, refereegranskad vetenskaplig]

We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist Of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.

Nyckelord: bismuth selenide, nanostructured interlayers, nanoelectromechanical switching, nanobelts, sandwich device



Denna post skapades 2016-06-27. Senast ändrad 2016-07-07.
CPL Pubid: 238378

 

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