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CMOS LARGE SIGNAL and RF Noise MODEL FOR CAD

Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Ferndahl (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
EUMC2006 Manchester Vol. 1 (2006), 1,
[Konferensbidrag, refereegranskat]

A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, Power Spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits. The LS model was extended to model the RF Noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model



Denna post skapades 2007-01-08. Senast ändrad 2007-04-11.
CPL Pubid: 23806

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektronik

Chalmers infrastruktur

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Denna publikation ingår i:


Microwave and millimeter wave CMOS Characterization, modeling, and design