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AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

Johan Bergsten (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; X. Li ; D. Nilsson ; O. Danielsson ; H. Pedersen ; E. Janzen ; U. Forsberg ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Japanese Journal of Applied Physics (0021-4922). Vol. 55 (2016), 5,
[Artikel, refereegranskad vetenskaplig]

AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using an alternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuning the growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growth conditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation and dispersion. Good isolation with OFF-state currents of 2 x 10(-6)A/mu m, breakdown fields of 70V/mu m, and low drain induced barrier lowering of 0.13mV/V are found. Dispersive effects are examined using pulsed current-voltage measurements. Current collapse and knee walkout effects limit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer a versatile approach to decrease dispersive effects in GaN HEMTs. (C) 2016 The Japan Society of Applied Physics

Denna post skapades 2016-06-17.
CPL Pubid: 237841


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur