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Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy

P. Wang ; W. W. Pan ; X. Y. Wu ; C. F. Cao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Q. Gong
Applied Physics Express (1882-0778). Vol. 9 (2016), 4,
[Artikel, refereegranskad vetenskaplig]

We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(G) and LO(G) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(G) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.

Nyckelord: band-gap, ge, gaas1-xbix, alloys, si, Physics

Denna post skapades 2016-06-14. Senast ändrad 2017-07-04.
CPL Pubid: 237696


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik


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