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Controlling In-Ga-Zn-O thin films transport properties through density changes

J. Kaczmarski ; Torben Boll (Institutionen för fysik, Materialens mikrostruktur (Chalmers)) ; M. A. Borysiewicz ; A. Taube ; Mattias Thuvander (Institutionen för fysik, Materialens mikrostruktur (Chalmers)) ; Jia Yan Law (Institutionen för fysik, Materialens mikrostruktur (Chalmers)) ; E. Kaminska ; Krystyna Stiller (Institutionen för fysik, Materialens mikrostruktur (Chalmers))
Thin Solid Films (0040-6090). Vol. 608 (2016), p. 57-61.
[Artikel, refereegranskad vetenskaplig]

In the following study we investigate the effect of the magnetron cathode current (I-c) during reactive sputtering of In-Ga-Zn-O (a-IGZO) on thin-films nanostructure and transport properties. All fabricated films are amorphous, according to X-ray diffraction measurements. However, High Resolution Transmission Electron Microscopy revealed the a-IGZO fabricated at I-C = 70 mA to contain randomly-oriented nanocrystals dispersed in amorphous matrix, which disappear in films deposited at higher cathode current. These nanocrystals have the same composition as the amorphous matrix. One can observe that, while I-C is increased from 70 to 150 mA, the carrier mobility improves from mu(Hall) = 6.9 cm(2)/Vs to mu(Hall) = 9.1 cm(2)/Vs. Additionally, the increase of I-C caused a reduction of the depletion region trap states density of the Ru-Si-O/In-Ga-Zn-O Schottky barrier. This enhancement in transport properties is attributed to the greater overlapping of s-orbitals of the film-forming cations caused by increased density, evidenced by X-ray reflectivity, at a fixed chemical composition, regardless nanostructure of thin films. (C) 2016 Elsevier B.V. All rights reserved.

Nyckelord: In-Ga-Zn-O, IGZO, Atom Probe Tomography, Amorphous oxide semiconductors, Schottky contacts

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Denna post skapades 2016-06-10.
CPL Pubid: 237559


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