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Resistive SiC-MESFET mixer

Kristoffer Andersson (Institutionen för mikroelektronik) ; Joakim Eriksson (Institutionen för mikroelektronik) ; Niklas Rorsman (Institutionen för mikroelektronik) ; Herbert Zirath (Institutionen för mikroelektronik)
IEEE Microwave and Wireless Components Letters Vol. 12 (2002), 4, p. 119-121.
[Artikel, refereegranskad vetenskaplig]

A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.

Nyckelord: MESFET devices, Mixer circuits, Silicon carbide, Energy gap, Frequency converters, Frequency modulation, Electric conductivity, Bandpass filters, Electric resistance, Computer simulation

Denna post skapades 2006-12-06. Senast ändrad 2017-03-21.
CPL Pubid: 23682


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Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)


Elektroteknik och elektronik

Chalmers infrastruktur