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Impact of tunnel-barrier strength on magnetoresistance in carbon nanotubes

Caitlin Morgan ; Maciej Misiorny (Institutionen för mikroteknologi och nanovetenskap, Tillämpad kvantfysik) ; Dominik Metten ; Sebastian Heedt ; Thomas Schäpers ; Claus M. Schneider ; Carola Meyer
Physical Review Applied (2331-7019). Vol. 5 (2016), 5, p. 054010.
[Artikel, refereegranskad vetenskaplig]

We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of tau_s=1.1  ns, a value comparable with those found in silicon- or graphene-based spin-valve devices.

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Denna post skapades 2016-05-18. Senast ändrad 2016-07-08.
CPL Pubid: 236682


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