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Flip-chip assembled 7 GHz ultra-low phase-noise InGaP HBT oscillator

Li-Han Hsu (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Dan Kuylenstierna (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; E. Y. Chang ; C. T. Wang
2010 International Conference on Compound Semiconductor Manufacturing Technology; Portland, OR; United States; 17 May 2010 through 20 May 2010 (2010)
[Konferensbidrag, refereegranskat]

This paper reports on a flip-chip assembled 7 GHz ultra-low phase-noise GaAs InGaP heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) oscillator. The cross-coupled oscillator was flip-chip bonded to an in-house fabricated Al2O3 carrier with patterns optimized for low-loss transitions. After flip-chip, the phase noise of the crosscoupled InGaP HBT oscillator was improved due to an increased Q-factor of the resonant tank. An ultra-low phase-noise of -112 dBc/Hz @ 100 kHz offset and -128 dBc/Hz @ 1 MHz offset with a high output power of 7 dBm at 7 GHz was achieved. To our best knowledge, this is the lowest phase noise reported for a flip-chip assembled oscillator.

Nyckelord: Flip-chip, Interconnection, Microwave, MMIC, Oscillator, Phase noise, Cross-coupled, Cross-coupled oscillators, Flip chip, High output power, InGaP heterojunction bipolar transistors (HBT), Monolithic microwave integrated circuit oscillators, Resonant tanks, Flip chip devices, Heterojunction bipolar transistors, Microwave oscillators, Microwaves, Monolithic microwave integrated circuits, Oscillators (electronic), Semiconductor device manufacture

Denna post skapades 2016-05-12. Senast ändrad 2017-03-21.
CPL Pubid: 236432


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur