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Demonstration of post-growth wavelength control of VCSELs using high-contrast gratings

Erik Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Johan S. Gustavsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Jörgen Bengtsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Åsa Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; D. Fattal ; W. Sorin ; M. Tan
HP Laboratories Technical Report (1368-6798). 70, (2015)

We demonstrate post-growth wavelength setting of vertical-cavity surface-emitting lasers (VCSELs) using high-contrast gratings (HCGs). By fabricating HCGs with different duty-cycle and period, the HCG reflection phase can be varied, in effect giving different optical cavity lengths for HCGVCSELs with different grating parameters. This enables fabrication of monolithic multi-wavelength HCG-VCSEL arrays for wavelength-division multiplexing (WDM). The GaAs HCG is suspended in air by selective removal of an InGaP sacrificial layer. Electrically injected 980-nm HCGVCSELs with sub-mA threshold currents indicate high reflectivity from the GaAs HCGs. Lasing over a wavelength span of 15 nm was achieved, enabling a 4-channel WDM array with 5 nm channel spacing. Device design, fabrication and experimental proof-of-concept are presented.

Nyckelord: CWDM, High contrast grating, Optical interconnects, VCSELs, Diffraction gratings, Gallium arsenide, Optical waveguides, Semiconducting gallium, Transceivers, Wavelength division multiplexing, Electrically injected, High reflectivity, High-contrast gratings, Sacrificial layer, Threshold currents, Wavelength control, Surface emitting lasers

Published article can be found here: https://publications.lib.chalmers.se/publication/234227

Denna post skapades 2016-05-12. Senast ändrad 2016-08-15.
CPL Pubid: 236377