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Local electric field screening in bi-layer graphene devices

V. Panchal ; C.E. Giusca ; Arseniy Lartsev (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; R. Yakimova ; O. Kazakova
Frontiers of Physics (2095-0462). Vol. 2 (2014), p. 1-10.
[Artikel, refereegranskad vetenskaplig]

© 2014 Panchal, Giusca, Lartsev, Yakimova and Kazakova. We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG) and bi-layer graphene (2LG) devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.

Nyckelord: Double-layer graphene , Electrical gating , Epitaxial graphene , Scanning gate microscopy , Single-layer graphene



Denna post skapades 2016-05-11. Senast ändrad 2016-05-11.
CPL Pubid: 236309

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Materialteknik

Chalmers infrastruktur