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Enhanced Cold Wall CVD Reactor Growth of Horizontally Aligned Single-walled Carbon Nanotubes

Wei Mu (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Michael Edwards (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Yifeng Fu (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Kjell Jeppson (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Johan Liu (Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system ) ; Eun-Hye Kwak ; Bingan Chen ; Shirong Huang ; Kenneth Teo ; Goo-Hwan Jeong
Electronic Materials Letters (1738-8090). Vol. 12 (2016), 3, p. 329-337.
[Artikel, refereegranskad vetenskaplig]

Synthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1-2 tubes/μm with high growth quality as shown by Raman analysis.

Nyckelord: horizontally aligned; SWCNTs; cold-wall; hot-wall; CVD; synthesis



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Denna post skapades 2016-04-20. Senast ändrad 2016-05-27.
CPL Pubid: 234935

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Elektronikmaterial och system

Ämnesområden

Produktion
Nanoteknik

Chalmers infrastruktur

 


Projekt

Denna publikation är ett resultat av följande projekt:


Carbon Based Smart Systems for Wireless Applications (NANO RF) (EC/FP7/318352)