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Experimental analysis of shot-noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

O. Garcia-Perez ; J. Mateos ; S. Perez ; T. Gonzalez ; Andreas Westlund (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2015 International Conference on Noise and Fluctuations, ICNF 2015 (2015)
[Konferensbidrag, refereegranskat]

In this work, current noise measurements of submicron InGaAs/InAlAs recessed planar diodes are presented. The presence of a barrier in the potential profile under the source side of the recess may affect the statistics of passage of carriers, which in turn would lead to suppressed shot noise levels. However, evidencing this noise suppression from the measurements is challenging, due to the undesired effects from the accesses and contact resistances. The presented results are provided as a starting point for a future de-embedding process able to precisely determine the actual noise properties below the recess.

Nyckelord: III-V semiconductor materials, mesoscopic devices, Noise measurement, shot noise

Denna post skapades 2016-04-14. Senast ändrad 2016-10-14.
CPL Pubid: 234705


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur