CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

An Accurate Empirical Model Based on Volterra Series for FET Power Detectors

Michael Andersson (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
IEEE transactions on microwave theory and techniques (0018-9480). Vol. 64 (2016), 5, p. 1431-1441.
[Artikel, refereegranskad vetenskaplig]

An empirical model for field-effect transistor (FET) based power detectors is presented. The electrical model constitutes a Volterra analysis based on a Taylor series expansion of the drain current together with a linear embedding small-signal circuit. It is fully extracted from S-parameters and IV curves. The final result are closed-form expressions for the frequency dependence of the noise equivalent power (NEP) in terms of the FET intrinsic capacitances and parasitic resistances. Excellent model agreement to measured NEP of coplanar access graphene FETs with varying channel dimensions up to 67 GHz is obtained. The influence of gate length on responsivity and NEP is theoretically and experimentally studied.

Nyckelord: Analytical model, field-effect transistors (FETs), graphene, microwave detectors, power detectors, terahertz detectors, Volterra



Den här publikationen ingår i följande styrkeområden:

Läs mer om Chalmers styrkeområden  

Denna post skapades 2016-03-29. Senast ändrad 2016-08-23.
CPL Pubid: 233745

 

Läs direkt!

Lokal fulltext (fritt tillgänglig)

Länk till annan sajt (kan kräva inloggning)